Laserhyphen;induced metal deposition on semiconductors from liquid electrolytes

摘要

Maskless deposition of gold and copper from electrolyte solutions ontonhyphen;doped semiconductors (GaAs, Si) is investigated. The metal deposits are found to have lateral dimensions of about 1 mgr;m and are in barrier contact with the semiconductor. The proposed deposition mechanism is governed by the electric fields resulting from the Dember effect, thephyphen;njunction, and the thermal emf.