Compositional disordering of strained InGaAs/GaAs quantum wells by Au implantation: Channeling effects

摘要

Compositional disordering of strained InGaAs quantum wells by the implantation of Au ions has been examined as a function of the incident implantation angle. Together, photoluminescence and secondary ionhyphen;mass spectrometry demonstrate that mixing at depths significantly greater than the meanhyphen;implantation range is due to the creation of point defects by ions which have channeled into the crystal. Compositional disordering effects due to the rapid thermal diffusion of Au ions was negligible.