Intense photoluminescence from laterally anodized porous Si

摘要

We have studied photoluminescence (PL) from porous Si anodized laterally along the length of the Si wafer. Broad PL peaks were observed with peak intensities at sim;640 to 720 nm. Strong PL intensity could be observed from 550 to 860 nm. Roomhyphen;temperature peak intensities were within an order of magnitude of peak intensities of AlGaAs/GaAs multihyphen;quantum wells taken at 4.2 K, and total intensities were comparable. A blue shift of peak intensities from sim;680 to 620 nm could be observed after thermal anneal at 500thinsp;deg;C in O2and subsequent HF dip.