The influence of the growth temperature of ternary compounds on the degradation rate of AlGaAs/GaAs laser diodes was studied. The optimal temperature was found to be 700 degrees C. A further reduction in the degradation rate may be achieved by using a ridge-type stripe-array contact instead of a broad-area contact. The percentage of diodes with a lifetime exceeding 2500 hours (at Poutapproximately=2 mW mu m-1per facet) was four times larger for the former laser than for the latter.
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