The random spatial distribution of carriers in fully ionised and compensated semiconductors is investigated here. As in a previous paper by B.K. Ridley (1988) the semiconductor is divided in elementary volumes Vgwhose dimensions are equal to several times the Debye length, each elementary volume being assumed to be neutral overall. The probability p( nu ) to find nu carriers in Vsis obtained in terms of a Bessel function of imaginary argument, and this function is closely approximated by an analytical expression. The results are illustrated on some examples. These deal with p( nu ) and associated probabilities, the average Fermi level (for a particular case in GaAs) and its variance, and demonstrate their dependence on compensation and on the average number of carriers in Vs.
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