Spontaneous Raman spectroscopy with pulsedhyphen;ultraviolet laser excitation of the Stokes vibrational Raman lines was used to measure the percent dissociation of nitrogen and sulfur hexafluoride in lowhyphen;pressure radio refrequency discharges of the type used for processing semiconductor materials. Measurements of the percent dissociation of sulfur hexafluoride, at pressures between 200 and 600 mTorr, show a strong pressure dependence which is consistent with recombination playing an important role in sulfur hexafluoride discharge kinetics.
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