Carrier dynamics and emissionhyphen;line narrowing innhyphen; andphyphen;type molecularhyphen;beam grown ZnSe epilayers

摘要

Carrier recombination processes in thinhyphen;film epitaxial ZnSe are investigated using a transienthyphen;grating technique. For photoexcitation levels in the 1017ndash;1018cmminus;3range the dominant recombination mechanism is found to be radiative, described by a rate coefficient of 8times;10minus;9cm3thinsp;sminus;1. For densities exceeding approximately 2times;1018cmminus;3ultrafast grating recovery is observed, accompanied by line narrowing of the nearhyphen;bandhyphen;edge blue photoluminescence; this is interpreted as being due to stimulated radiative recombination.