Study of the wurtzite zinc-blende mixed-structured GaAs nanocrystals grown on Si (111) substrates

摘要

The structure and growth mechanism of GaAs nanocrystals grown on Si (111) substrates by using the molecular beam epitaxy method have been studied using transmission electron microscopy. The isolated nanocrystals had hexangular shapes, with aspect ratio ～1 and high symmetry. The crystal structure of the GaAs nanocrystals contains a mixture of a stable state of zinc-blende and a metastable state of wurtzite. A number of thin wurtzite layers parallel to the Si (111) plane are introduced into the zinc-blende GaAs nanocrystals as stacking faults. Formation of partial dislocations near the GaAs/Si interface and the small difference in the Gibbs free energy between the zinc-blende and wurtzite structures could cause formation of wurtzite as stacking faults in the zinc-blende structure.