Electronic passivation ofnhyphen; andphyphen;type GaAs using chemical vapor deposited GaS

摘要

We report on the electronic passivation ofnhyphen; andphyphen;type GaAs using chemical vapor deposited cubic GaS. Au/GaS/GaAs fabricated metalhyphen;insulatorhyphen;semiconductor (MIS) structures exhibit classical highhyphen;frequency capacitor versus voltage (Chyphen;V) behavior with wellhyphen;defined accumulation and inversion regions. Using highhyphen; and lowhyphen;frequencyChyphen;V, the interface trap densities of sim;1011eVminus;1cmminus;2on bothnhyphen; andphyphen;type GaAs are determined. The electronic condition of GaS/GaAs interface did not show any deterioration after a six week time period.