The graded-gate FET: a MOS device structure for magnetic field sensing applications

摘要

Conventional, split-drain MAGFETS have a low relative sensitivity. A modified device structure, the graded-gate FET (GFET), is presented. In the GFET the gate voltage varies linearly along the gate. Measured sensitivities for various geometries are reported, and the variation of sensitivity with the design parameters is discussed.