Optically transparent Sb-doped SrTiO_(3) thin films with a transmittance higher than 95 in most of the visible region have been grown on SrTiO_(3) (001) substrate by pulsed laser deposition. The films behave as an n-type semiconductor between 10 K and room temperature. The carrier concentration and mobility of the films at room temperature are ～5.8×10~(17) cm~(-3) and ～6.4 cm~(2)/V s, respectively. X-ray photoelectron spectroscopy measurement reveals that the delocalized electrons from the Sb dopants give rise to deep impurity levels within the band gap of the parent compound, which are responsible for the electrical conduction observed. The wide band gap and low density of states in the conduction band account for transparency of the films.
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