Electron capture cross sections of the platinum donor level in silicon

摘要

Direct measurements of the electron capture cross section of the Ev+0.32 eV platinum donor level are reported. Deep level transient spectroscopy (DLTS) has been employed for the measurements. The cross section has been found to be temperature independent in the range 140-190 K with a value of 2.5+or-1.5*10-17cm2.