Suppression of Alhyphen;Ga interdiffusion by a WNxfilm on an AlxGa1minus;xAs/AlAs superlattice structure

摘要

Undoped AlAs/AlxGa1minus;xAs superlattice structures were grown by molecular beam epitaxy and annealed under Si3N4, SiO2, or WNxencapsulant films, both with and without the presence of a120Sn implant. Enhancement of the Alhyphen;Ga interdiffusion coefficient occurred under the Si3N4and SiO2films due to indiffusion of Si from the films. Enhancement was even greater during diffusion of the Sn implant. In both cases intermixing enhancement was due to the Fermi level effect. Underneath the WNxfilm, however, interdiffusion was suppressed even in the presence of the Sn dopant.