An isothermal etchbackhyphen;regrowth method for highhyphen;efficiency Ga1minus;xAlxAshyphen;GaAs solar cells

摘要

Highhyphen;efficiencyphyphen;Ga1minus;xAlxAs,phyphen;GaAs,nhyphen;GaAs solar cells are made by isothermally soakingnhyphen;GaAs substrates in an undersaturated Znhyphen;doped Gahyphen;Alhyphen;As melt. This onehyphen;step growth procedure produces a graded band gapphyphen;Ga1minus;xAlxAs layer 0.2ndash;0.4 mgr;m thick. Efficiencies of 18.5percnt; AM0 and 21.9percnt; AM1 have been measured.