Latticehyphen;matched Sc1minus;xErxAs/GaAs heterostructures: A demonstration of new systems for fabricating latticehyphen;matched metallic compounds to semiconductors

摘要

Successful growth of latticehyphen;matched Sc1minus;xErxAs layers buried in GaAs with a roomhyphen;temperature resistivity of sim;50 mgr;OHgr;thinsp;cm demonstrates the feasibility of fabricating heterostructures of latticehyphen;matched rarehyphen;earth monopnictides and monochalcogenides in semiconductors. Reflection highhyphen;energy electron diffraction oscillations during ScAs, ErAs, and Sc1minus;xErxAs growth indicate monolayerhyphen;byhyphen;monolayer growth.