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Study of the dislocation structure involved in a nanoindentation test by atomic force microscopy and controlled chemical etching

机译:通过原子力显微镜和可控化学蚀刻研究纳米压痕测试中涉及的位错结构

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摘要

In this paper, it is shown that combining AEM, chemical etching and controlled polishing, progressively removing thin layers of material, allows a three-dimensional reconstruction of the volume distribution of dislocations about and under nanoindentation imprints. To illustrate the method, results obtained in MgO, a material known for its simple plasticity, have been selected. It is shown, comparing surface deformation and etching pattern, that the entire dislocation distribution associated with small indents can be analysed in terms of individual dislocations, leading to a better under-standing of the elementary mechanisms of plasticity associated with the early stages of indents formation in crystal-line material.
机译:在本文中,表明将AEM,化学蚀刻和受控抛光相结合,逐步去除薄层材料,可以对纳米压痕周围和下方的位错的体积分布进行三维重建。为了说明该方法,选择了在MgO(一种以其简单塑性而闻名的材料)中获得的结果。结果表明,通过比较表面变形和蚀刻图案,可以根据单个位错来分析与小压痕相关的整个位错分布,从而更好地理解与晶体线材料中压痕形成的早期阶段相关的塑性基本机制。

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