Molecular beam epitaxial growth and characterization of 2hyphen;in.hyphen;diam Hg1minus;xCdxTe films on GaAsthinsp;(100) substrates

摘要

Hg1minus;xCdxTe films with 2 in. diameters have been grown by molecular beam epitaxy on GaAsthinsp;(100) substrates. These films were grown in both the (100) and (sim;(111))Bcrystallographic orientations and in both conduction types. They were characterized byinsituelectron diffraction, infrared absorption, and van der Pauw dc Hall measurements. Their surfaces were shiny and mirrorlike from center to edge. The Cd concentrations (x) of these films were very uniform, exhibiting standard deviations (Dgr;x) as low as 0.7percnt; of the mean (xmacr;). Their thicknesses also were uniform within 0.6percnt;. These films were completely uniform in their conduction types; that is, thenhyphen;type films were entirelyntype, and likewise for thephyphen;type films. The Hall mobilities of these films show them to be of high quality, with values as high as 6.7times;102cm2thinsp;Vminus;1thinsp;sminus;1for thephyphen;type (x=0.22) and 1.8times;105cm2thinsp;Vminus;1thinsp;sminus;1for thenhyphen;type films (x=0.21). These results represent an important achievement toward the future of infrared detector technology.