Bias circuit effects on the currenthyphen;voltage characteristic of doublehyphen;barrier tunneling structures: Experimental and theoretical results

摘要

Using the stable, dc currenthyphen;voltage (Ihyphen;V) curve measured from a doublehyphen;barrier resonant tunneling structure, we have studied the effects of external circuit elements on device oscillations. A simulation, using the experimentalIhyphen;Vand a simple circuit model for the biasing arrangement, showed that hysteresis and vertical jumps appear in the currenthyphen;voltage curve when the circuit oscillates. This observation is supported by experimental results obtained on the same device with external circuit elements intentionally added to the biasing configuration.