Molecular beam epitaxy of layered Dyhyphen;Bahyphen;Cuhyphen;O compounds

摘要

Heteroepitaxial Dyhyphen;Bahyphen;Cuhyphen;O films have been growninsituon SrTiO3substrates using an oxygen plasma beam and elemental source beams in a modified molecular beam epitaxy machine. By periodically shuttering the Dy and Ba beams during growth, flat surfaces of layered Dyhyphen;Bahyphen;Cuhyphen;O compounds have been obtained. Periodic oscillations in the intensity of theinsitureflection highhyphen;energy electron diffraction pattern were observed during shuttered growths. Depending on growth conditions, the ashyphen;grown layers have ranged from insulating to superconducting with onset temperatures above 60 K.