Longhyphen;wavelength (1.3 mgr;m) luminescence in InGaAs strained quantumhyphen;well structures grown on GaAs

摘要

Longhyphen;wavelength (gsim;1.1 mgr;m) optical emission has been achieved in pseudomorphic InGaAshyphen;onhyphen;GaAs quantumhyphen;well structure by replacing InGaAs random alloy quantum well with (InAs)n/(GaAs)nshort period superlattice (SPS). With the same quantumhyphen;well width, the photoluminescence peak energy of the SPS structure is always smaller than that of the In0.5Ga0.5As randomhyphen;alloy structure. Strong photoluminescence was observed in (InAs)1/(GaAs)1SPS quantum wells with thickness up to 84 Aring;. The longest opticalhyphen;emission wavelength observed in (InAs)1/(GaAs)1SPS quantumhyphen;well structures at room temperature was 1.34 mgr;m.