Surface structure change during solid phase epitaxial growth of an amorphous Si film deposited on Sithinsp;(111)

摘要

Some surface structure change of an amorphous Si film deposited on Sithinsp;(111) during the solid phase epitaxy was observed by lowhyphen;energy electron diffraction (LEED). The LEED intensity profile shows the formation of 7times;7 structure whenever a crystallized surface is constructed. The intensity increases with an increase of the annealing temperatureTa, where the increasing rate withTabecomes small for 590Ta700thinsp;deg;C, and for 780Ta850thinsp;deg;C. It is discussed that there exists some process inhibiting the growth of the 7times;7 structure regions in these two temperature ranges.