Roomhyphen;temperature recombination of point defects produced in siliconphyphen;njunctions by light ion irradiation

摘要

The reverse current in ap+hyphen;nsilicon junction irradiated by highhyphen;energy helium ions was measured as a function of time at room temperature. A rather large exponential decrease of the reverse current has been observed and the measured time constant is 3plusmn;0.2 days. Defect profiling by currenthyphen;voltage characteristics indicates that the damage recombination occurs without longhyphen;range migration of defects. The defects responsible for the reverse current of irradiated silicon diodes after the long roomhyphen;temperature aging are characterized by an energy level 0.11 eV above Si midgap.