Ionhyphen;implanted In0.1Ga0.9As metalhyphen;semiconductor fieldhyphen;effect transistors on GaAsthinsp;(100) substrates

摘要

Ionhyphen;implanted In0.1Ga0.9As metalhyphen;semiconductor fieldhyphen;effect transistors (MESFETs) have been fabricated on 3 in. GaAsthinsp;(100) substrates. The structure comprises an undoped InGaAs epitaxially layer grown directly on a GaAsthinsp;(100) substrate by the metalorganic chemical vapor deposition (MOCVD) technique. Si+28is ion implanted into the InGaAs layer to form an active channel layer. MESFETs with 100 mgr;m gate width and 0.5 mgr;m gate length are fabricated using standard process techniques. The best device shows a maximum transconductance of 426 mS/mm. FromShyphen;parameter measurements, the currenthyphen;gain cutoff frequencyftis 37 GHz and the maximum available gain cutoff frequencyfmaxis 85 GHz. These results are comparable to InGaAs MESFETs grown by MBE.