Measurement of AlN/GaN (0001) heterojunction band offsets by xhyphen;ray photoemission spectroscopy

摘要

Xhyphen;ray photoemission spectroscopy has been used to measure the valence band offset Dgr;Evfor the AlN/GaN (0001) heterojunction interface. The heterojunction samples were grown by reactive molecular beam epitaxy on 6Hndash;SiC (0001) substrates. A nested interface band alignment with Dgr;Ev=1.36plusmn;0.07 eV is obtained (Dgr;Ec/Dgr;Ev=52/48). copy;1996 American Institute of Physics.