Singlehyphen;crystalline, epitaxial cubic SiC films grown on (100) Si at 750thinsp;deg;C by chemical vapor deposition

摘要

Singlehyphen;crystalline, epitaxial cubic (100) SiC films have been grown on (100) Si substrates at 750thinsp;deg;C by lowhyphen;pressure chemical vapor deposition, using methylsilane, SiCH3H3, a single precursor with a Si:C ratio of 1:1, and H2. This epitaxial growth temperature is the lowest reported to date. The films were characterized by means of transmission electron microscopy, xhyphen;ray diffraction, infrared transmission, fourhyphen;point probe and other methods. Based on doublehyphen;crystal xhyphen;ray diffractometry, the crystalline quality of our films is equivalent to that of commercial films of similar thickness. The letter describes the novel growth apparatus used and the properties of the films.