Threehyphen;terminal operation of the doublehyphen;heterostructure optoelectronic switching laser

摘要

The doublehyphen;heterostructure optoelectronic switch is demonstrated as a threehyphen;terminal laser. The basic laser structure employs a graded index single quantum well (GRIN SQW) and implements the thirdhyphen;terminal injector as a selfhyphen;aligned implant to the inversion channel. The implant simultaneously serves as the optical confining layer. Threshold currents of 500 A/cm2are obtained and complete control of the switching characteristic is obtained with an input current density of 0.8 A/cm2.