Chemically controlled deep level formation and band bending at metalhyphen;CdTe interfaces

摘要

We have used reactive metal interlayers to suppress anion outdiffusion at Auhyphen;CdTe junctions and thereby to alter the formation of deep interfacial states. Using soft xhyphen;ray photoemission and luminescence spectroscopies, we report a dramatically reducedphyphen;type band bending and demonstrate that deep levels observed directly at the interface are responsible for the chemically induced electrical behavior.