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Impact ionizing electroluminescence of a double barrier structure

机译:Impact ionizing electroluminescence of a double barrier structure

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摘要

The impact ionizing electroluminescence model of a unipolar double barrier structure has been developed. The electron density in the quantum well and the hole density generated in the collector region are based on electron current. The electroluminescence results from direct radiative recombination between the electrons and holes in the quantum well. The results show that a light on-off ratio of the electroluminescence can be obtained.

著录项

  • 来源
    《optical and quantum electronics 》 |1994年第11期| 1033-1040| 共页
  • 作者

    HanyuSheng; Soo-JinChua;

  • 作者单位

    National University of Singapore;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 英语
  • 中图分类
  • 关键词

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