Electrical uniformity for Sihyphen;implanted layer of completely dislocationhyphen;free and striationhyphen;free GaAs

摘要

Electrical uniformity for Sihyphen;implanted layer of Inhyphen;doped GaAs completely free from dislocations and striations is evaluated here using small Hall chips with 400hyphen;mgr;m spacing. Sheet carrier concentration, which determines threshold voltages of fieldhyphen;effect transistors, is quite uniform across the wafer, and its standard deviation decreases to 1/5 of that for the conventional liquidhyphen;encapsulated Czochralskihyphen;grown GaAs. Hall mobility is not degraded despite a high concentration (5ndash;10times;1019atomsthinsp;cmminus;3) of indium. These results are promising for realizing substrates of highhyphen;performance GaAs largehyphen;scale integrated circuits.