Roomhyphen;temperature electron trapping in Al0.35Ga0.65As/GaAs modulationhyphen;doped fieldhyphen;effect transistors

摘要

Transient measurements of drain current are made as the gate voltage is pulsed in Al0.35Ga0.65As/GaAs depletion mode modulationhyphen;doped fieldhyphen;effect transistors. Large nonexponential decays are observed in the switching characteristics. Evidence is given which shows that these transients are caused by the emptying and filling of deep donors in the Al0.35Ga0.65As.