Effect of electrode microstructure on leakage current in leadndash;lanthanumndash;zirconatendash;titanate multilayer capacitors

摘要

Leadndash;lanthanumndash;zirconatendash;titanate (PLZT) multilayer capacitors involving platinum bottom electrodes have been fabricated on a silicon nitride/silicon (SiN/Si) substrate system. Leakage current characteristics show strong dependence on the processing temperature of the bottom electrode. A drop in leakage current by five orders of magnitude has been observed for capacitor with platinum electrode deposited at room temperature. Scanning tunneling microscopy (STM) studies reveal significant differences in the microstructure of platinum films deposited at different substrate temperatures. Based on STM results, a correlation between the microstructure of the bottom electrode, space layer at PLZT/Pt interface, and the nucleation of PLZT has been suggested to explain this new observation. copy;1996 American Institute of Physics.