Double and triple charge pumps with mos diodes: Dynamic models to an optimized design

摘要

AbstractIn this paper the dynamic models of the double and triple charge pumps are extended to circuits in which the diodes are realized with an MOS transistor having a drain‐gate contact. In this circuit realization we must take into account the influence of the source‐substrate voltage on the threshold voltageVt.The effects of the source‐substrate voltage on the dynamic behaviour are analysed and discussed in detail. Moreover, simple equations allowing one to perform a pencil‐and‐paper area‐efficient optimized design are developed from the two new models.The models obtained are also validated by SPICE simulation of the circuit assuming a typical CMOS 3