机译:STM STUDY OF STRUCTURAL DEFECTS ON IN SITU PREPARED SI(111)1X1-H SURFACES
LINKOPING UNIV DEPT PHYS S-58183 LINKOPING SWEDEN;
Chemisorption; Hydrogen; Low index single crystal surfaces; Scanning tunneling microscopy; Silicon; Surface chemical reaction; Surface defects; Surface relaxation and reconstruction; Surface structure; morphology; roughness; and topography; Scanning-tunneling-microscopy; Si(111)-7x7 surface; Atomic-hydrogen; Desorption-kinetics; Spectroscopy; Reconstruction; Termination; Dependence; Adsorption; Chemistry;