A dryhyphen;etched inorganic resist

摘要

An ashyphen;deposited As2S3thin film is employed as a negative working inorganic resist in lithographic applications. A CF4plasma is used to etch differentially for pattern delineation. A maximum etch rate ratio of 1.8 between the unexposed and exposed films is obtained. Aghyphen;photodoped As2S3is found to have a much slower etch rate in the CF4plasma. Grating patterns have been obtained using this dry process. The extension of this concept to conventional organic polymer resists is considered.