phyphen;type conductivity control of ZnSe highly doped with nitrogen by metalorganic molecular beam epitaxy

摘要

phyphen;type ZnSe with resistivity low enough for device application has been realized by metalorganic molecular beam epitaxy. This method has enabled growth ofphyphen;type ZnSe doped with nitrogen at concentrations as high as 1019cmminus;3by using ammonia as a dopant source. The dependence of photoluminescence and electrical properties on substrate temperature has been investigated. Hall measurements showphyphen;type conductivity with a resistivity of 0.57 OHgr;thinsp;cm, a carrier concentration of 5.6times;1017thinsp;cmminus;3, and a Hall mobility of 20 cm2/Vthinsp;s.