Tahyphen;Si films with different composition ratio were prepared by the pulsed laser deposition technique on a Si3N4/Si(100) substrate at room temperature. Crosshyphen;sectional transmission electron spectroscopy (TEM) and Auger electron spectroscopy in combination with Rutherford backscattering spectroscopy were employed to investigate the deposited structures. Ashyphen;deposited films were found to be spontaneously modulated with composition along the growth direction, the period of the structure depending upon Si/Ta average composition ratio, and is about 50 Aring; in thickness. Auger electron spectroscopy analysis confirms the codeposited Tahyphen;Si layers reveal an oscillating character of the chemical bonding. The contrast analysis of crosshyphen;sectional TEM images and the study of electronhyphen;diffraction patterns identify amorphous state (up to the resolution of analytical technique) of the deposited layers. The observed effect is attributed to the nature of the depositing flux.
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