The photoacoustic characterization of Si solarhyphen;cell samples having distinct internal resistances, both at low and high modulation frequencies, yielded results significantly different from each other. For large samples with very small internal resistances (sim;0.1 OHgr;), the additional contribution of the current dissipation near shorthyphen;circuit conditions yielded results similar to those obtained with photothermal radiometry or the pyroelectric detection. For small samples, the results for the conversion efficiency, both at low and high modulation frequencies, are similar to ones obtained from the conventional electrical measurements.
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