ZnO transducers on InSb for lowhyphen;temperature ultrasonics

摘要

A reproducible method for the fabrication of ZnO transducers on InSb substrates is described. These transducers are being used for ultrasonic attenuation measurements over a wide lowhyphen;frequency range (90ndash;600 MHz) at very low temperatures(0.1ndash;4.2 K). They have been characterized by their xhyphen;ray diffraction patterns, their insertion loss, and their contribution to the acoustic attenuation in InSb at low temperatures.