Analysis of cuthyphen;off frequency rollhyphen;off at high currents in SiGe doublehyphen;heterojunction bipolar transistors

摘要

Rollhyphen;off of the current gain cuthyphen;off frequency inNpNdoublehyphen;heterojunction bipolar transistors for large collector currents has been analyzed. The analysis includes such effects as the electron barrier formed at the collector base junction due to electron accumulation. Included in this investigation is also lateral electron diffusion before injection into the collector spacehyphen;charge region at the basehyphen;collector heterointerface once the barrier is formed. The available data obtained in SiGe heterojunction bipolar transistors are in good agreement with this model.