Non-catalytic displacement plating (NCDP) of photosensitive semiconducting thin films

摘要

Photosensitive thin films of binary and ternary phase semiconductors have been deposited on metallic substrates by non-catalytic displacement plating(NCDP). Various preparative parameters are optimized for deposition of CdSe, CdTe and ZnCdSe on Zn and Ti substrates. Bandgap of Zn{sub}(1-x)Cd{sub}x has been tailored from 1.68 to2.53 eV for various Zn/Cd molar ratios. Photoelectrodes thus prepared are found to yield a short circuit current up to 2 mA and an open circuit voltage up to 0.45 V inS{sup}(2-)/S{sub}2{sup}(2-).