Pseudomorphic InAsSb multiple quantum well injection laser emitting at 3.5 mgr;m

摘要

A pseudomorphic, compressively strained InAs0.94Sb0.06multiple quantum well injection laser, emitting in the 3.5ndash;3.6 mgr;m range is reported. The device was grown by metalorganic chemical vapor deposition, and xhyphen;ray and optical characterization indicate that the active region has a very low dislocation density. In pulsed mode, the laser operated at 135 K and displayed a characteristic temperature of 33 K, equaling the highest value reported for molecularhyphen;beam epitaxy grown, InAsSb/InAlAsSb active region lasers of comparable wavelength. Factors limiting the performance of these lasers are discussed. copy;1996 American Institute of Physics.