Photoelectrochemical properties of spray deposited n-ZnIn2Se4 thin films

摘要

Zinc indium selenide (ZnIn2Se4) thin films have been prepared by spraying a mixture of an equimolar aqueous solution of zinc sulphate (ZnSO4), indium trichloride (InCl3), and selenourea (CH4N2Se), onto preheated fluorine-doped tin oxide (FTO)-coated glass substrates at optimized conditions of substrate temperature and a solution concentration. The photoelectrochemical (PEC) cell configuration of n-ZnIn2Se4/1 M (NaOH + Na2S + S)/C has been used for studying the current voltage (I-V), spectral response, and capacitance voltage (C-V) characteristics of the films. The PEC study shows that the ZnIn2Se4 thin films exhibited n-type conductivity. The junction quality factor in dark (n(d)) and light (n(l)), series and shunt resistance (R-s and R-sh), fill factor (FF) and efficiency (eta) for the cell have been estimated. The measured (FF) and eta of the cell are, respectively, found to be 0.435 and 1.47. (c) 2007 Elsevier B.V. All rights reserved.