Optical timehyphen;ofhyphen;flight investigation of ambipolar carrier transport in GaAlAs using GaAs/GaAlAs double quantum well structures

摘要

We propose a new allhyphen;optical timehyphen;ofhyphen;flight method which provides transport properties like the average carrier velocity and diffusivity from measurements of the flight duration in semiconductor materials sandwiched between two quantum wells. The method is capable of very high spatial and temporal resolution and is demonstrated by timehyphen;ofhyphen;flight experiments in GaAlAs.