Accelerated stephyphen;temperature aging of AlxGa1minus;xAs heterojunction laser diodes

摘要

Doublehyphen;heterojunction Al0.3Ga0.7As/Al0.08Ga0.92As lasers (oxidehyphen;striped and Al2O3facet coated) were subjected to stephyphen;temperature aging from 60 to 100thinsp;deg;C. The change in threshold current and spontaneous output was monitored at 22thinsp;deg;C. The average time required for a 20percnt; pulsed threshold current increases from about 500 h, when operating at 100thinsp;deg;C, to about 5000 h at 70thinsp;deg;C. At 22thinsp;deg;C, the extrapolated time is about 106h. The time needed for a 50percnt; spontaneous emission reduction is of the same order of magnitude. The resulting rsquo;rsquo;activation energiesrsquo;rsquo; are sim;0.95 eV for laser degradation and sim;1.1 eV for the spontaneous output decrease.