Interface compound formation and dependence on Inhyphen;layer thickness in Ni/In thinhyphen;film systems

摘要

Interdiffusion and interface compound formation has been observed at the system Ni/In by using thinhyphen;film couples as well as thin In films on low index Ni singlehyphen;crystal substrates. The method applied was the perturbed ggr;ggr;hyphen;angular correlation technique, which is very sensitive to local structures and their changes around probe atoms. The successive occurrence of different Ni/In compounds could be observed on isochronal annealing above 230 K. A correlation between the appearance of compounds and In film thickness has been found.