Preparation of HfO{sub}2 thin films by chemical vapor deposition for gate-insulator applications

摘要

HfO{sub}2 thin films were deposited on p-type Si (100) substrates by the chemical vapor deposition technique using Hf(O-tC{sub}4H{sub}9){sub}4 as a source material. Capacitance-voltage (C-V) characteristics of Al/HfO{sub}2/SiO{sub}2/Si/Ag structures had little hysteresis and an SiO{sub}2 equivalent oxide thickness (EOT) of 1.8 nm was obtained for the sample with a physical HfO{sub}2 thickness of 2.5 nm. HRTEM image shows the presence of 1.4 nm interfacial layer. The relative dielectric constant ε{sub}r of the HfO{sub}2 layer and the thickness of the interfacial layer, estimated from the EOT plot as a function of HfO{sub}2 physical thickness, are 19.7 and 1.4 nm, respectively.