Microwave resonance induced variations in the short circuit photocurrent of edgehyphen;defined filmhyphen;fed growth ribbon silicon solar cells have been observed. These signals have zerohyphen;crossinggvalues and linewidths which are similar to electron spin resonance and spin dependent transport (SDT) observations on silicon bicrystals, damaged silicon, and polycrystalline silicon. The SDT signals seen here depend on cell illumination levels in a way that suggests that the values of recombination velocity at electrically active linear boundaries decrease with illumination intensity. Hydrogen processed cells show markedly smaller SDT response, consistent with the passivation of Si dangling bond defects. While only dangling bond SDT response is apparent at 300 K, we suggest that similar experiments performed at low temperatures may have the resolution to identify the centers responsible for the majority of the electronhyphen;hole recombination events in these cells.
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