Pulsedhyphen;electronhyphen;beam annealing of polycrystallinehyphen;silicon films

摘要

Pulsedhyphen;electronhyphen;beam annealing of moderatelyhyphen;phosphorushyphen;doped polyhyphen;silicon films reduces their resistance below that of thermally annealed films under optimum conditions. In heavily doped films, the electron pulse can cause the effective dopant concentration to exceed that corresponding to solid solubility, but the excess dopant does not stay in solution upon subsequent heat treatment.