Sn incorporation into InP grown by molecular beam epitaxy: A secondaryhyphen;ion mass spectrometry study

摘要

Secondaryhyphen;ion mass spectrometric analysis of InP/Ga0.47In0.53As heterostructures incorporating Snhyphen;doped regions has been used to study the distribution of Sn in InP during molecular beam epitaxy. Depending upon the flux conditions, up to a monolayer of Sn can accumulate on the growing InP surface, and the surface accumulation mediates the incorporation of Sn into the growing layer. The surface to bulk distribution ratio of Sn per monolayer grown is less than 10minus;3. Once the surface has been saturated all additional Sn in the beam is incorporated and concentrations exceeding 1020cmminus;3can be achieved.