Reduction of interface hydrogen content by partially ionized beam deposition technique

摘要

Hydrogen content at the Al/Si interface of samples with Al films deposited by conventional means and by a partially ionized beam (PIB) was measured using1H(15N,agr;ggr;)12C nuclear resonance reaction. We observed that samples with PIBhyphen;deposited Al film exhibited significantly lower hydrogen concentration at the Al/Si in interface than that of the sample deposited by conventional means. The results demonstrated the ability of the PIB technique to perform interface selfhyphen;cleaning, at least for hydrogen contaminant.